{ "item_title" : "Advanced Gate Stacks for High-Mobility Semiconductors", "item_author" : [" Athanasios Dimoulas", "Evgeni Gusev", "Paul C. McIntyre "], "item_description" : "Strained-Si CMOS Technology.- High Current Drivability MOSFET Fabricated on Si(110) Surface.- Advanced High-Mobility Semiconductor-on-Insulator Materials.- Passivation and Characterization of Germanium Surfaces.- Interface Engineering for High-? Ge MOSFETs.- Effect of Surface Nitridation on the Electrical Characteristics of Germanium High-?/Metal Gate Metal-Oxide-Semiconductor Devices.- Modeling of Growth of High-? Oxides on Semiconductors.- Physical, Chemical, and Electrical Characterization of High-? Dielectrics on Ge and GaAs.- Point Defects in Stacks of High-? Metal Oxides on Ge: Contrast with the Si Case.- High ? Gate Dielectrics for Compound Semiconductors.- Interface Properties of High-? Dielectrics on Germanium.- A Theoretical View on the Dielectric Properties of Crystalline and Amorphous High-? Materials and Films.- Germanium Nanodevices and Technology.- Opportunities and Challenges of Germanium Channel MOSFETs.- Germanium Deep-Submicron p-FET and n-FET Devices, Fabricated on Germanium-On-Insulator Substrates.- Processing and Characterization of III-V Compound Semiconductor MOSFETs Using Atomic Layer Deposited Gate Dielectrics.- Fabrication of MBE High-? MOSFETs in a Standard CMOS Flow.", "item_img_path" : "https://covers3.booksamillion.com/covers/bam/3/64/209/071/3642090710_b.jpg", "price_data" : { "retail_price" : "169.99", "online_price" : "169.99", "our_price" : "169.99", "club_price" : "169.99", "savings_pct" : "0", "savings_amt" : "0.00", "club_savings_pct" : "0", "club_savings_amt" : "0.00", "discount_pct" : "10", "store_price" : "" } }

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