{ "item_title" : "Hfo2-Based Ferroelectric Materials", "item_author" : [" Xubing Lu "], "item_description" : "Explores HfO2-based ferroelectrics for memory, sensing, and advanced electronic applications Ferroelectric hafnium oxide (HfO2)-based materials have transformed the field of electronic materials and device design, offering pathways to overcome long-standing barriers in scalability, compatibility, and reliability. The emergence of robust ferroelectricity in doped HfO2 has revolutionized both research and industry perspectives, providing a viable solution where conventional ferroelectrics often fell short. With contributions from leading experts, HfO2-Based Ferroelectric Materials addresses the critical need for a consolidated reference on HfO2-based ferroelectrics, offering foundational knowledge as well as the latest insights into fabrication, material characterization, and device integration. The book opens with fundamentals of ferroelectricity and the mechanisms driving HfO2-based ferroelectric behavior, before progressing to detailed examinations of deposition techniques, superlattice structures, and reliability considerations. It further explores a broad spectrum of applications, including non-volatile memories, neuromorphic computing, compute-in-memory architectures, and negative capacitance transistors, alongside emerging roles in energy storage, microwave technologies, and piezoelectric systems. Special attention is given to persistent challenges?such as the wake-up effect, fatigue, and imprint issues?and the strategies developed to mitigate them. An authoritative and well-structured resource for advancing the frontiers of electronic materials and device technologies, HfO2-Based Ferroelectric Materials: * Explains the origins of ferroelectricity in doped HfO2 and its unique material advantages * Details deposition techniques and approaches to regulating ferroelectric behavior * Examines device-level challenges, including wake-up effect, fatigue, and imprint reliability * Highlights applications spanning non-volatile memories, neuromorphic computing, and energy-efficient devices * Discusses advanced designs such as superlattice-like laminate structures and 3D ferroelectric memories * Provides insight into the reliability of HfO2-based thin films, capacitors, and field-effect transistors HfO2-Based Ferroelectric Materials: Fabrication, Characterization, and Device Applications is an essential resource for materials scientists, electronics engineers, semiconductor and solid-state physicists, and professionals in the semiconductor and sensor industries. It is also a valuable reference for graduate-level courses in electronic materials, semiconductor devices, and advanced nanotechnology within physics, materials science, and electrical engineering degree programs.", "item_img_path" : "https://covers4.booksamillion.com/covers/bam/3/52/735/318/3527353186_b.jpg", "price_data" : { "retail_price" : "185.00", "online_price" : "185.00", "our_price" : "185.00", "club_price" : "185.00", "savings_pct" : "0", "savings_amt" : "0.00", "club_savings_pct" : "0", "club_savings_amt" : "0.00", "discount_pct" : "10", "store_price" : "" } }

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