{ "item_title" : "CMOS Gate-Stack Scaling -- Materials, Interfaces and Reliability Implications", "item_author" : [" Alexander A. Demkov", "Bill Taylor", "H. Rusty Harris "], "item_description" : "To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate. Presentations collected here focus on understanding, from a chemistry and materials perspective, the mechanism of interface formation and defects at interfaces, for both conventional Si and alternative channel (Ge or III-V) systems. Several papers address reliability concerns for high-k/metal gate (basic physical models, charge trapping, etc.), while others cover characterization of the thin films and interfaces which comprise the gate stack. Topics include: advanced Si-based gate stacks; and alternate channel materials.", "item_img_path" : "https://covers3.booksamillion.com/covers/bam/1/10/740/832/1107408326_b.jpg", "price_data" : { "retail_price" : "37.00", "online_price" : "37.00", "our_price" : "37.00", "club_price" : "37.00", "savings_pct" : "0", "savings_amt" : "0.00", "club_savings_pct" : "0", "club_savings_amt" : "0.00", "discount_pct" : "10", "store_price" : "" } }

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