{
"item_title" : "Characterization of Wide Bandgap Power Semiconductor Devices",
"item_author" : [" Fei Wang", "Zheyu Zhang", "Edward A. Jones "],
"item_description" : "Based on the authors' years of extensive experience, this is an authoritative overview of Wide Bandgap (WBG) device characterization. It provides essential tools to assist researchers, advanced students and practicing engineers in performing both static and dynamic characterization of WBG devices, particularly those based on using silicon carbide (SiC) and gallium nitride (GaN) power semiconductors. The book presents practical considerations for real applications, and includes examples of applying the described methodology.",
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Characterization of Wide Bandgap Power Semiconductor Devices
Overview
Based on the authors' years of extensive experience, this is an authoritative overview of Wide Bandgap (WBG) device characterization. It provides essential tools to assist researchers, advanced students and practicing engineers in performing both static and dynamic characterization of WBG devices, particularly those based on using silicon carbide (SiC) and gallium nitride (GaN) power semiconductors. The book presents practical considerations for real applications, and includes examples of applying the described methodology.
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Details
- ISBN-13: 9781785614910
- ISBN-10: 1785614916
- Publisher: Institution of Engineering & Technology
- Publish Date: October 2018
- Dimensions: 9.4 x 6.4 x 0.9 inches
- Shipping Weight: 1.5 pounds
- Page Count: 347
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