{ "item_title" : "Development, Design and Analysis of Type-II Hetero-Strained Nanosystem", "item_author" : [" Rasmita Barik", "Rasmita Dhara "], "item_description" : "This book investigates the advancement and analysis of strained channel cylindrical gate-all-around (CGAA) FETs. The study explores a nano-scale design incorporating three ultrathin strained layers: two outer layers of strained silicon (s-Si) and a middle layer of strained silicon germanium (s-SiGe), forming a heterostructure-on-insulator (HOI) within the CGAA FET. These strained layers in the channel effectively confine quantum carriers, thereby enhancing carrier mobility and reducing threshold voltage roll-off.", "item_img_path" : "https://covers4.booksamillion.com/covers/bam/6/20/038/158/6200381585_b.jpg", "price_data" : { "retail_price" : "92.00", "online_price" : "92.00", "our_price" : "92.00", "club_price" : "92.00", "savings_pct" : "0", "savings_amt" : "0.00", "club_savings_pct" : "0", "club_savings_amt" : "0.00", "discount_pct" : "10", "store_price" : "" } }

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