{ "item_title" : "MOSFETs", "item_author" : [" Gabriel Alfonso Rincón-Mora "], "item_description" : "This 62-page handbook uses insight to explain how metal-oxide-semiconductor (MOS) field-effect transistors (FETs) block and conduct current in sub-threshold, weak inversion, and inversion. It describes how MOSFETs accumulate, deplete, and invert their channels and how they saturate their currents in sub-threshold and inversion. It also discusses body effect, how gate-channel oxide capacitance distributes across operating regions, and short-channel effects, like drain-induced barrier lowering (DIBL), surface scattering, hot-electron injection, oxide-surface ejections, velocity saturation, and impact ionization and avalanche. Discussions extend to varactors, MOS diodes, lightly doped drains (LDD), diffused-channel MOSFETs (DMOS), junction isolation, substrate MOSFETs, welled MOSFETs, and electronic and systemic noise coupling and injection. Illustrative figures, equations, and examples complement discussions throughout.", "item_img_path" : "https://covers3.booksamillion.com/covers/bam/1/07/788/821/107788821X_b.jpg", "price_data" : { "retail_price" : "8.99", "online_price" : "8.99", "our_price" : "8.99", "club_price" : "8.99", "savings_pct" : "0", "savings_amt" : "0.00", "club_savings_pct" : "0", "club_savings_amt" : "0.00", "discount_pct" : "10", "store_price" : "" } }

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