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{ "item_title" : "Nanoscale Semiconductor Devices", "item_author" : [" Balwinder Raj", "Abusaleh Jabir", "Saurabh Khandelwal "], "item_description" : "This book offers a comprehensive exploration of the design and technology of nanoscale semiconductor devices, with a special focus on novel materials and structures that address the limitations of conventional silicon-based technologies. As the miniaturization of devices pushes beyond traditional scaling limits, alternative materials--such as 2D materials, Germanium, III-V compounds, carbon, and graphene--are critical to overcoming challenges like short channel effects, high leakage currents, and power dissipation. Targeted towards researchers, scientists, and postgraduate students, this book covers cutting-edge device architectures such as FinFETs, GAA-FETs, nanowires, CNTFETs, TFETs, FeFETs, HEMTs, and spin-based devices. It also details the modeling, simulation, and application-driven design for low-power, high-performance VLSI systems. With clear explanations and in-depth analysis, this volume bridges the gap between traditional MOSFET fabrication and next-generation nanoelectronic design. Readers will gain a solid understanding of material properties, device behavior, and circuit co-design strategies, making it an essential resource for advancing chip design in the sub-micron era. ", "item_img_path" : "https://covers4.booksamillion.com/covers/bam/3/03/237/850/3032378508_b.jpg", "price_data" : { "retail_price" : "199.99", "online_price" : "199.99", "our_price" : "199.99", "club_price" : "199.99", "savings_pct" : "0", "savings_amt" : "0.00", "club_savings_pct" : "0", "club_savings_amt" : "0.00", "discount_pct" : "10", "store_price" : "" } }
Nanoscale Semiconductor Devices|Balwinder Raj

Nanoscale Semiconductor Devices : Materials, Modeling, and Circuit Integration

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Overview

This book offers a comprehensive exploration of the design and technology of nanoscale semiconductor devices, with a special focus on novel materials and structures that address the limitations of conventional silicon-based technologies. As the miniaturization of devices pushes beyond traditional scaling limits, alternative materials--such as 2D materials, Germanium, III-V compounds, carbon, and graphene--are critical to overcoming challenges like short channel effects, high leakage currents, and power dissipation.

Targeted towards researchers, scientists, and postgraduate students, this book covers cutting-edge device architectures such as FinFETs, GAA-FETs, nanowires, CNTFETs, TFETs, FeFETs, HEMTs, and spin-based devices. It also details the modeling, simulation, and application-driven design for low-power, high-performance VLSI systems.

With clear explanations and in-depth analysis, this volume bridges the gap between traditional MOSFET fabrication and next-generation nanoelectronic design. Readers will gain a solid understanding of material properties, device behavior, and circuit co-design strategies, making it an essential resource for advancing chip design in the sub-micron era.

This item is Non-Returnable

Details

  • ISBN-13: 9783032378507
  • ISBN-10: 3032378508
  • Publisher: Springer
  • Publish Date: November 2026

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