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{ "item_title" : "Optical Investigation of Transition Metal Implanted Wide Band Gap Semiconductors", "item_author" : [" Brian P. Feller "], "item_description" : "Thin films of GaN, Al0.1Ga0.9N, and ZnO were implanted with Cr, Mn, and nickel Ni to produce dilute magnetic semiconductors. Optical and magnetic techniques were used to evaluate crystal structure restoration and coercive field strength as a function of implant species and annealing temperature. Maximum crystal restoration was obtained for Al0.1Ga0.9N after annealing at 675 oC; for Cr implanted p-GaN after annealing at 750 oC; for Mn or Ni implanted p-GaN after annealing at 675 oC; for Cr implanted ZnO after annealing at 700 oC; for Mn implanted ZnO after annealing at 675 oC; and for Ni implanted ZnO after annealing at 650 oC. Maximum coercive field strengths were found for Cr implanted Al0.1Ga0.9N after annealing at 750 oC; for Mn implanted Al0.1Ga0.9N after annealing at 675 oC; for Ni implanted Al0.1Ga0.9N after annealing at 700 oC; for Cr or Mn implanted p-GaN after annealing at 725 oC; for Ni implanted p-GaN after annealing at 675 oC; for Cr or Ni implanted ZnO after annealing at 725 oC; and for Mn implanted ZnO after annealing at 725 oC. Optimum annealing conditions for optical and magnetic properties of the implanted wide band gap semiconductors agree with each other very well.This work has been selected by scholars as being culturally important, and is part of the knowledge base of civilization as we know it. This work was reproduced from the original artifact, and remains as true to the original work as possible. Therefore, you will see the original copyright references, library stamps (as most of these works have been housed in our most important libraries around the world), and other notations in the work.This work is in the public domain in the United States of America, and possibly other nations. Within the United States, you may freely copy and distribute this work, as no entity (individual or corporate) has a copyright on the body of the work.As a reproduction of a historical artifact, this work may contain missing or blurred pages, poor pictures, errant marks, etc. Scholars believe, and we concur, that this work is important enough to be preserved, reproduced, and made generally available to the public. We appreciate your support of the preservation process, and thank you for being an important part of keeping this knowledge alive and relevant.", "item_img_path" : "https://covers1.booksamillion.com/covers/bam/1/28/686/140/1286861403_b.jpg", "price_data" : { "retail_price" : "15.95", "online_price" : "15.95", "our_price" : "15.95", "club_price" : "15.95", "savings_pct" : "0", "savings_amt" : "0.00", "club_savings_pct" : "0", "club_savings_amt" : "0.00", "discount_pct" : "10", "store_price" : "" } }
Optical Investigation of Transition Metal Implanted Wide Band Gap Semiconductors|Brian P. Feller

Optical Investigation of Transition Metal Implanted Wide Band Gap Semiconductors

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Overview

Thin films of GaN, Al0.1Ga0.9N, and ZnO were implanted with Cr, Mn, and nickel Ni to produce dilute magnetic semiconductors. Optical and magnetic techniques were used to evaluate crystal structure restoration and coercive field strength as a function of implant species and annealing temperature. Maximum crystal restoration was obtained for Al0.1Ga0.9N after annealing at 675 oC; for Cr implanted p-GaN after annealing at 750 oC; for Mn or Ni implanted p-GaN after annealing at 675 oC; for Cr implanted ZnO after annealing at 700 oC; for Mn implanted ZnO after annealing at 675 oC; and for Ni implanted ZnO after annealing at 650 oC. Maximum coercive field strengths were found for Cr implanted Al0.1Ga0.9N after annealing at 750 oC; for Mn implanted Al0.1Ga0.9N after annealing at 675 oC; for Ni implanted Al0.1Ga0.9N after annealing at 700 oC; for Cr or Mn implanted p-GaN after annealing at 725 oC; for Ni implanted p-GaN after annealing at 675 oC; for Cr or Ni implanted ZnO after annealing at 725 oC; and for Mn implanted ZnO after annealing at 725 oC. Optimum annealing conditions for optical and magnetic properties of the implanted wide band gap semiconductors agree with each other very well.

This work has been selected by scholars as being culturally important, and is part of the knowledge base of civilization as we know it. This work was reproduced from the original artifact, and remains as true to the original work as possible. Therefore, you will see the original copyright references, library stamps (as most of these works have been housed in our most important libraries around the world), and other notations in the work.

This work is in the public domain in the United States of America, and possibly other nations. Within the United States, you may freely copy and distribute this work, as no entity (individual or corporate) has a copyright on the body of the work.

As a reproduction of a historical artifact, this work may contain missing or blurred pages, poor pictures, errant marks, etc. Scholars believe, and we concur, that this work is important enough to be preserved, reproduced, and made generally available to the public. We appreciate your support of the preservation process, and thank you for being an important part of keeping this knowledge alive and relevant.

This item is Non-Returnable

Details

  • ISBN-13: 9781286861400
  • ISBN-10: 1286861403
  • Publisher: Biblioscholar
  • Publish Date: October 2012
  • Dimensions: 9.21 x 6.14 x 0.13 inches
  • Shipping Weight: 0.22 pounds
  • Page Count: 62

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