Physics and Electrical Diagnostics of Silicon-On-Insulator Nanoelectronic Structures and Devices
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Overview
This book provides a comprehensive treatment of silicon-on-insulator (SOI) nanoelectronic structures and devices, covering the evolution of SOI technology, wafer fabrication methods, the physics of SOI MOS structures, and the scaling challenges of nanoscale transistors. It presents a detailed overview of electrical characterization and parameter-extraction techniques, including threshold-voltage determination, capacitance-voltage analysis, carrier mobility measurements, and methods for investigating generation and recombination processes. The book further examines the electrical properties and performance of advanced SOI device architectures, including ultra-thin-body MOSFETs, triple-gate FinFETs, and junctionless nanowire transistors, linking fundamental semiconductor physics with practical approaches for evaluating and optimizing next-generation nanoelectronic devices.
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Details
- ISBN-13: 9783032419699
- ISBN-10: 3032419697
- Publisher: Springer
- Publish Date: February 2027
- Page Count: 274
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