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{ "item_title" : "Rapid Thermal Processing for Future Semiconductor Devices", "item_author" : [" H. Fukuda", "Fukuda", "Hisashi Fukuda "], "item_description" : "This volume is a collection of papers which were presented at the 2001 International Conference on Rapid Thermal Processing (RTP 2001) held at Ise Shima, Mie, on November 14-16, 2001. This symposium is second conference followed the previous successful first International RTP conference held at Hokkaido in 1997. The RTP 2001 covered the latest developments in RTP and other short-time processing continuously aiming to point out the future direction in the Silicon ULSI devices and II-VI, III-V compound semiconductor devices. This book covers the following areas: advanced MOS gate stack, integration technologies, advancd channel engineering including shallow junction, SiGe, hetero-structure, novel metallization, inter-connect, silicidation, low-k materials, thin dielectrics including gate dielectrics and high-k materials, thin film deposition including SiGe, SOI and SiC, process and device modelling, Laser-assisted crystallization and TFT device fabrication technologies, temperature monitoring and slip-free technologies.", "item_img_path" : "https://covers2.booksamillion.com/covers/bam/0/44/451/339/0444513396_b.jpg", "price_data" : { "retail_price" : "137.00", "online_price" : "137.00", "our_price" : "137.00", "club_price" : "137.00", "savings_pct" : "0", "savings_amt" : "0.00", "club_savings_pct" : "0", "club_savings_amt" : "0.00", "discount_pct" : "10", "store_price" : "" } }
Rapid Thermal Processing for Future Semiconductor Devices|H. Fukuda

Rapid Thermal Processing for Future Semiconductor Devices

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Overview

This volume is a collection of papers which were presented at the 2001 International Conference on Rapid Thermal Processing (RTP 2001) held at Ise Shima, Mie, on November 14-16, 2001. This symposium is second conference followed the previous successful first International RTP conference held at Hokkaido in 1997. The RTP 2001 covered the latest developments in RTP and other short-time processing continuously aiming to point out the future direction in the Silicon ULSI devices and II-VI, III-V compound semiconductor devices. This book covers the following areas: advanced MOS gate stack, integration technologies, advancd channel engineering including shallow junction, SiGe, hetero-structure, novel metallization, inter-connect, silicidation, low-k materials, thin dielectrics including gate dielectrics and high-k materials, thin film deposition including SiGe, SOI and SiC, process and device modelling, Laser-assisted crystallization and TFT device fabrication technologies, temperature monitoring and slip-free technologies.

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Details

  • ISBN-13: 9780444513397
  • ISBN-10: 0444513396
  • Publisher: Elsevier Bv
  • Publish Date: April 2003
  • Dimensions: 9.21 x 6.14 x 0.35 inches
  • Shipping Weight: 0.53 pounds
  • Page Count: 160

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