{
"item_title" : "Research on the Radiation Effects and Compact Model of Sige Hbt",
"item_author" : [" Yabin Sun "],
"item_description" : "Nominated as an outstanding PhD dissertation by Tsinghua University, China Proposes a new technique for detecting displacement damage in silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) with swift heavy ions instead of neutrons Presents an improved, high-frequency, small-signal model for SiGe HBTs taking into account the distribution characteristics",
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Overview
Nominated as an outstanding PhD dissertation by Tsinghua University, China Proposes a new technique for detecting displacement damage in silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) with swift heavy ions instead of neutrons Presents an improved, high-frequency, small-signal model for SiGe HBTs taking into account the distribution characteristics
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Details
- ISBN-13: 9789811351815
- ISBN-10: 9811351813
- Publisher: Springer
- Publish Date: January 2019
- Dimensions: 9.21 x 6.14 x 0.41 inches
- Shipping Weight: 0.61 pounds
- Page Count: 168
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