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Research on the Radiation Effects and Compact Model of Sige Hbt|Yabin Sun

Research on the Radiation Effects and Compact Model of Sige Hbt

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Overview

Nominated as an outstanding PhD dissertation by Tsinghua University, China Proposes a new technique for detecting displacement damage in silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) with swift heavy ions instead of neutrons Presents an improved, high-frequency, small-signal model for SiGe HBTs taking into account the distribution characteristics

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Details

  • ISBN-13: 9789811351815
  • ISBN-10: 9811351813
  • Publisher: Springer
  • Publish Date: January 2019
  • Dimensions: 9.21 x 6.14 x 0.41 inches
  • Shipping Weight: 0.61 pounds
  • Page Count: 168

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