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{ "item_title" : "Simulation of Semiconductor Devices and Processes", "item_author" : [" Siegfried Selberherr", "Hannes Stippel", "Ernst Strasser "], "item_description" : "Challenges to Achieving Accurate Three-Dimensional Process Simulation.- Modeling Nano-Structure Devices.- About Boltzmann Equations for Transport Modeling in Semiconductors.- Applied TCAD in Mega-Bits Memory Design.- Process Flow Representation within the VISTA Framework.- A Powerful TCAD System Including Advanced RSM Techniques for Various Engineering Optimization Problems.- Modeling of VLSI MOSFET Characteristics Using Neural Networks.- Coupling a Statistical Process-Device Simulator with a Circuit Layout Extractor for a Realistic Circuit Simulation of VLSI Circuits.- Simulation of Self-Heating Effects in a Power p-i-n Diode.- Impact of Cell Geometries and Electrothermal Effects on IGBT Latch-Up in 2D-Simulation.- On the Influence of Thermal Diffusion and Heat Flux on Bipolar Device and Circuit Performance.- 2-D Electrothermal Simulation and Failure Analysis of GTO Turn-off with Complete Chopper Circuit Parasitics.- 3D Thermal/Electrical Simulation of Breakdown in a BJT Using a Circuit Simulator and a Layout-to-Circuit Extraction Tool.- Nonlocal Oxide Injection Models.- Electron Transport in Silicon Dioxide at Intermediate and High Electric Fields.- Efficient and Accurate Simulation of EEPROM Write Time and its Degradation Using MINIMOS.- Influence of Oxide-Damage on Degradation-Effects in Bipolar-Transistors.- The Application of Sparse Supernodal Factorization Algorithms for Structurally Symmetric Linear Systems in Semiconductor Device Simulation.- Newton-GMRES Method for Coupled Nonlinear Systems Arising in Semiconductor Device Simulation.- Practical Use of a Hierarchical Linear Solver Concept for 3D MOS Device Simulation.- Further Improvements in Nonsymmetric Hybrid Iterative Methods.- Rigorous Microscopic Drift-Diffusion Theory and its Applications to Nanostructures.- Atomistic Evaluation of Diffusion Theories for the Diffusion of Dopants in Vacancy Gradients.- Self Diffusion in Silicon Using the Ackland Potential.- Three-Dimensional Numerical Simulation for Low Dopant Diffusion in Silicon.- 3-D Diffusion Models for Chemically-Amplified Resists Using Massively Parallel Processors.- Improvement of Initial Solution Projection in Solving General Semiconductor Equations Including Engery Transport.- A Numerical Implementation of the Energy Balance Equations Based on Physical Considerations.- Construction of Stable Discretization Schemes for the Hydrodynamic Device Model.- Three-Dimensional Implementation of a Unified Transport Model.- Mixed-Mode Multi-Dimensional Device and Circuit Simulation.- Modeling High Concentration Boron Diffusion with Dynamic Clustering: Influence of the Initial Conditions.- Simulation of High-Dose Ion Implantation-Induced Transient Diffusion and of Electrical Activation of Boron in Crystalline Silicon.- Physical Modeling of the Enhanced Diffusion of Boron Due to Ion Implantation in Thin Base npn Bipolar Transistors.- Simulation of Denuded Zone Formation in CZ Silicon.- A Closed Hydrodynamic Model for Hot-Carrier Transport in Submicron Semiconductor Devices.- Critical Assessment of Different Hydrodynamical Models for Avalanche Multiplication Calculation in Silicon Bipolar Transistors.- Dual Energy Transport Model with Coupled Lattice and Carrier Temperatures.- Inclusion of Electron-Electron Scattering in the Spherical Harmonics Expansion Treatment of the Boltzmann Transport Equation.- Quantitative 2D Stress Dependent Oxidation with Viscoelastic Model.- Oxidation Simulation and Growth Kinetics of Thin SiO2 in Pure N2O.- Accurate Simulation of Mechanical Stresses in Silicon During Thermal Oxidation.- Mechanical Stress Simulation During Gate Formation of MOS Devices Considering Crystallization-Induced Stress of p-Doped Silicon Thin Films.- Monte Carlo Simulation of Carrier-Carrier Interaction for Silicon Devices.- Monte Carlo MOSFET Simulator Including Inversion Layer Quantization.- Three-Dimensional Monte Carlo Simulation of Submicronic Devices.- Monte Carlo Analysis of Voltage Fluctuations in Two-Te...", "item_img_path" : "https://covers1.booksamillion.com/covers/bam/3/21/182/504/3211825045_b.jpg", "price_data" : { "retail_price" : "99.00", "online_price" : "99.00", "our_price" : "99.00", "club_price" : "99.00", "savings_pct" : "0", "savings_amt" : "0.00", "club_savings_pct" : "0", "club_savings_amt" : "0.00", "discount_pct" : "10", "store_price" : "" } }
Simulation of Semiconductor Devices and Processes|Siegfried Selberherr

Simulation of Semiconductor Devices and Processes : Volume 5

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Overview

Challenges to Achieving Accurate Three-Dimensional Process Simulation.- Modeling Nano-Structure Devices.- About Boltzmann Equations for Transport Modeling in Semiconductors.- Applied TCAD in Mega-Bits Memory Design.- Process Flow Representation within the VISTA Framework.- A Powerful TCAD System Including Advanced RSM Techniques for Various Engineering Optimization Problems.- Modeling of VLSI MOSFET Characteristics Using Neural Networks.- Coupling a Statistical Process-Device Simulator with a Circuit Layout Extractor for a Realistic Circuit Simulation of VLSI Circuits.- Simulation of Self-Heating Effects in a Power p-i-n Diode.- Impact of Cell Geometries and Electrothermal Effects on IGBT Latch-Up in 2D-Simulation.- On the Influence of Thermal Diffusion and Heat Flux on Bipolar Device and Circuit Performance.- 2-D Electrothermal Simulation and Failure Analysis of GTO Turn-off with Complete Chopper Circuit Parasitics.- 3D Thermal/Electrical Simulation of Breakdown in a BJT Using a Circuit Simulator and a Layout-to-Circuit Extraction Tool.- Nonlocal Oxide Injection Models.- Electron Transport in Silicon Dioxide at Intermediate and High Electric Fields.- Efficient and Accurate Simulation of EEPROM Write Time and its Degradation Using MINIMOS.- Influence of Oxide-Damage on Degradation-Effects in Bipolar-Transistors.- The Application of Sparse Supernodal Factorization Algorithms for Structurally Symmetric Linear Systems in Semiconductor Device Simulation.- Newton-GMRES Method for Coupled Nonlinear Systems Arising in Semiconductor Device Simulation.- Practical Use of a Hierarchical Linear Solver Concept for 3D MOS Device Simulation.- Further Improvements in Nonsymmetric Hybrid Iterative Methods.- Rigorous Microscopic Drift-Diffusion Theory and its Applications to Nanostructures.- Atomistic Evaluation of Diffusion Theories for the Diffusion of Dopants in Vacancy Gradients.- Self Diffusion in Silicon Using the Ackland Potential.- Three-Dimensional Numerical Simulation for Low Dopant Diffusion in Silicon.- 3-D Diffusion Models for Chemically-Amplified Resists Using Massively Parallel Processors.- Improvement of Initial Solution Projection in Solving General Semiconductor Equations Including Engery Transport.- A Numerical Implementation of the Energy Balance Equations Based on Physical Considerations.- Construction of Stable Discretization Schemes for the Hydrodynamic Device Model.- Three-Dimensional Implementation of a Unified Transport Model.- Mixed-Mode Multi-Dimensional Device and Circuit Simulation.- Modeling High Concentration Boron Diffusion with Dynamic Clustering: Influence of the Initial Conditions.- Simulation of High-Dose Ion Implantation-Induced Transient Diffusion and of Electrical Activation of Boron in Crystalline Silicon.- Physical Modeling of the Enhanced Diffusion of Boron Due to Ion Implantation in Thin Base npn Bipolar Transistors.- Simulation of Denuded Zone Formation in CZ Silicon.- A Closed Hydrodynamic Model for Hot-Carrier Transport in Submicron Semiconductor Devices.- Critical Assessment of Different Hydrodynamical Models for Avalanche Multiplication Calculation in Silicon Bipolar Transistors.- Dual Energy Transport Model with Coupled Lattice and Carrier Temperatures.- Inclusion of Electron-Electron Scattering in the Spherical Harmonics Expansion Treatment of the Boltzmann Transport Equation.- Quantitative 2D Stress Dependent Oxidation with Viscoelastic Model.- Oxidation Simulation and Growth Kinetics of Thin SiO2 in Pure N2O.- Accurate Simulation of Mechanical Stresses in Silicon During Thermal Oxidation.- Mechanical Stress Simulation During Gate Formation of MOS Devices Considering Crystallization-Induced Stress of p-Doped Silicon Thin Films.- Monte Carlo Simulation of Carrier-Carrier Interaction for Silicon Devices.- Monte Carlo MOSFET Simulator Including Inversion Layer Quantization.- Three-Dimensional Monte Carlo Simulation of Submicronic Devices.- Monte Carlo Analysis of Voltage Fluctuations in Two-Te...

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Details

  • ISBN-13: 9783211825044
  • ISBN-10: 3211825045
  • Publisher: Springer
  • Publish Date: May 2003
  • Dimensions: 9.6 x 6.6 x 1.1 inches
  • Shipping Weight: 2.45 pounds
  • Page Count: 532

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