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{ "item_title" : "Topics in Growth and Device Processing of III-V Semiconductors", "item_author" : [" Cammy R. Abernathy", "Chih Tang Sah", "F. Ren "], "item_description" : "This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.", "item_img_path" : "https://covers4.booksamillion.com/covers/bam/9/81/021/884/9810218842_b.jpg", "price_data" : { "retail_price" : "125.00", "online_price" : "125.00", "our_price" : "125.00", "club_price" : "125.00", "savings_pct" : "0", "savings_amt" : "0.00", "club_savings_pct" : "0", "club_savings_amt" : "0.00", "discount_pct" : "10", "store_price" : "" } }
Topics in Growth and Device Processing of III-V Semiconductors|Cammy R. Abernathy

Topics in Growth and Device Processing of III-V Semiconductors

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Overview

This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.

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Details

  • ISBN-13: 9789810218843
  • ISBN-10: 9810218842
  • Publisher: World Scientific Publishing Company
  • Publish Date: November 1996
  • Dimensions: 8.9 x 6.2 x 1.3 inches
  • Shipping Weight: 1.8 pounds
  • Page Count: 560

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