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{ "item_title" : "Two-Dimensional Hole Systems in Indium-Based Quantum Well Heterostructures", "item_author" : [" Josef Loher "], "item_description" : "The complex spin-orbit interaction (SOI) of two-dimensional hole gas (2DHG) systems - the relativistic coupling of the hole spin degree of freedom to their movement in an electric field - is of fundamental interest in spin physics due to its key role for spin manipulation in spintronic devices. In this work, we were able to evaluate the tunability of Rashba-SOI-related parameters in the 2DHG system of In0.75Al0.25As/In0.75Ga0.25As/InAs: Mn quantum well heterostructures experimentally by analyzing the hole density evolution of quantum interference effects at low magnetic fields. We achieved to cover a significant range of hole densities by the joint action of the variation of the manganese modulation doping concentration during molecular beam epitaxy and external field-effect-mediated manipulation of the 2D carrier density in Hall bar devices by a metallic topgate.", "item_img_path" : "https://covers4.booksamillion.com/covers/bam/3/86/845/137/3868451374_b.jpg", "price_data" : { "retail_price" : "39.00", "online_price" : "39.00", "our_price" : "39.00", "club_price" : "39.00", "savings_pct" : "0", "savings_amt" : "0.00", "club_savings_pct" : "0", "club_savings_amt" : "0.00", "discount_pct" : "10", "store_price" : "" } }
Two-Dimensional Hole Systems in Indium-Based Quantum Well Heterostructures|Josef Loher

Two-Dimensional Hole Systems in Indium-Based Quantum Well Heterostructures

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Overview

The complex spin-orbit interaction (SOI) of two-dimensional hole gas (2DHG) systems - the relativistic coupling of the hole spin degree of freedom to their movement in an electric field - is of fundamental interest in spin physics due to its key role for spin manipulation in spintronic devices. In this work, we were able to evaluate the tunability of Rashba-SOI-related parameters in the 2DHG system of In0.75Al0.25As/In0.75Ga0.25As/InAs: Mn quantum well heterostructures experimentally by analyzing the hole density evolution of quantum interference effects at low magnetic fields. We achieved to cover a significant range of hole densities by the joint action of the variation of the manganese modulation doping concentration during molecular beam epitaxy and external field-effect-mediated manipulation of the 2D carrier density in Hall bar devices by a metallic topgate.

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Details

  • ISBN-13: 9783868451375
  • ISBN-10: 3868451374
  • Publisher: Universitatsverlag Regensburg
  • Publish Date: May 2016
  • Page Count: 166

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