{ "item_title" : "Ultra-Fast Silicon Bipolar Technology", "item_author" : [" Ludwig Treitinger", "Mitiko Miura-Mattausch "], "item_description" : "Since the first bipolar transistor was investigated in 1947, enormous efforts have been devoted to semiconductor devices. The strong world- wide competition in fabricating metal-oxide-semiconductor field-effect of develop- transistor (MOSFET) memories has accelerated the pace ments in semiconductor technology. Bipolar transistors play a major role due to their high-speed performance. Delay times of about 20 ps per gate have already been achieved. Because of this rapid technologi- cal progress, it is difficult to predict the future with any certainty. In 1987 a special session on ultrafast bipolar transistors was held at the European Solid-State Device Research Conference. Its aim was to sum- marize the most recent developments and to discuss the future of bip- olar transistors. This book is based on that session but also includes contributions by other participants, such that a broad range of up-to- is presented. Several conclusions can be drawn from date information this information: the first and most important is the very large poten- tial for future progress still existing in this field. This progress is char- acterized by the drive towards higher speed and lower power con- sumption required for complex single-chip systems, as well as by sev- eral concrete technological implementations for fulfilling these dem- is that a large part of this potential can be ands. The second conclusion realized by rather unsophisticated techniques and configurations well suited to uncomplicated transfer to fabrication.", "item_img_path" : "https://covers4.booksamillion.com/covers/bam/3/64/274/362/3642743625_b.jpg", "price_data" : { "retail_price" : "54.99", "online_price" : "54.99", "our_price" : "54.99", "club_price" : "54.99", "savings_pct" : "0", "savings_amt" : "0.00", "club_savings_pct" : "0", "club_savings_amt" : "0.00", "discount_pct" : "10", "store_price" : "" } }

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